| PART |
Description |
Maker |
| 2301 |
2.3 GHz Class C, Common Base; fO (MHz): 0; P(out) (W): 1.5; P(in) (W): 0.24; Gain (dB): 8.5; Vcc (V): 20; Cob (pF): 4; Case Style: 55BT-1 S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
1.5 Watt - 20 Volts, Class C Microwave 2300 MHz
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi, Corp.
GHZTECH[GHz Technology]
GHz Technology, Inc.
|
| 1014-6A |
1000-1400 MHz, 28V, Class C, Common Base; fO (MHz): 1400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 28; Cob (pF): 3.5; Case Style: 55LV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
|
Microsemi, Corp.
Microsemi Corporation
|
| 2001 |
BJT
1.0 Watt - 28 Volts, Class C Microwave 2000 MHz
|
GHZTECH[GHz Technology]
|
| 23A017 |
1.7 W, 20 V, 2300 MHz common emitter transistor
1.7 Watts, 20 Volts, Class A Linear to 2300 MHz
|
GHZTECH[GHz Technology]
|
| 10A030 |
3 W, 20 V, 1000 MHz common emitter transistor
3 Watts, 20 Volts, Class A Linear to 1000 MHz
|
GHz Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| 1819-35 |
35 W, 28 V, 1750-1850 MHz common base transistor
35 Watt - 28 Volts, Class C Microwave 1750 - 1850 MHz
BJT
|
GHZTECH[GHz Technology]
|
| MS1506 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 40; P(in) (W): 5; Gain (dB): 9; Vcc (V): 13.6; Cob (pF): 95; fO (MHz): 0; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| MS3023 |
2.0 GHz, Class C, Common Base; fO (MHz): 0; P(out) (W): 3; P(in) (W): 0.5; Gain (dB): 7.8; Vcc (V): 28; Cob (pF): 9.5; Case Style: M210 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| LHA2004-02 LHA2008-02 LHA2012-02 |
2000 MHz - 4000 MHz RF/MICROWAVE LIMITER
2000 MHz - 8000 MHz RF/MICROWAVE LIMITER
2000 MHz - 12000 MHz RF/MICROWAVE LIMITER
|
TEMEX COMPONENTS
|
| BTRM-50 |
Termination BNC 50ohm DC to 2000 MHz 0 MHz - 2000 MHz 50 ohm RF/MICROWAVE TERMINATION
|
Mini-Circuits
|
|
